IIT (Indian Institute of Technology) Roorkee based researchers have developed a high density, energy-efficient, and four logic-state memory device named Magnetoelectric Random Access Memory or MeRAM. It can provide a massive boost in overall computing processes, claims researchers.
Researchers claimed to have made a breakthrough in memory device technology with the development of MeRAM. According to the researchers, MeRAM could boost memory-intensive tasks like virtual reality, artificial intelligence, machine learning, multimedia signal processing, and pattern recognition.
To sum up, it could boost overall computing processes which, says researchers, usher in a new technology revolution. Explaining their tech, here’s what professor Davinder Kaur Walia said- “MeRAM has immense potential to be used in future memory chips for almost all electronic applications, including smartphones, tablets, computers, microprocessors, and for large data storage.”
Elaborating further, Walia said that they used magnetron sputtering technique to create MeRAM which is more advantageous than existing technologies as it combines extraordinary low energy with very high density, high-speed reading and writing times and non-volatility – the ability to retain data when no power is applied.
The world is moving towards quantum computing creating an ever-increasing demand for small and more efficient devices and technology, said Walia. In addition to Walia’s statement, we can also say that a lot of research work is going on in that area with the primary aim to increase computing processes in order achieve the true potential of nowadays technologies like artificial intelligence which would be used to process the massive amount of data in a tiny portion of the time.
“Our focus was to achieve a four-logic state as we knew that then we will be able to create a device which could probably usher in a new technological revolution,” added Walia.
Researchers achieved four-logic state using a new material called Ferromagnetic Shape Memory Alloys (FSMA) and the concept of the composite barrier. “The current ultimate memory cell has shown a tremendous improvement of nearly 140 percent in the memory functions,” she further stated.
